Beam reSilicon Carbide
Beam reRBSiC/SiSiCZvinonyanya kugadzirwa neSiC particles nesilicon dioxide nezvimwe zvinhu zvakapiswa pa1400-1500℃. Muumbirwo wayo unosanganisira SiC particles se aggregate uye SiO2 sechikamu chikuru chekusunga, uye ine hunhu hwesimba rakakwirira, kuramba oxidation zvakanaka uye kuramba kupisa shock.
danda reRSiCchinhu checeramic chinoshanda zvakanaka chine hunhu hwakanaka hwakadai sekusimba kwakanyanya, kuomarara kwakanyanya, uye kuramba kupisa kwakanyanya. Maitiro ayo ekugadzira anosanganisira matanho maviri: chekutanga, kunyungudutsa upfu hwesilicon carbide kuita muviri wakasvibira pasi pemamiriro ekupisa kwakanyanya, wozozvigadzirisazve kuburikidza nekurapa kupisa kwe reaction kuti ugadzire zvinhu zvesilicon carbide ceramic, wozozvicheka nekuzvikuya kuita chimiro chinodiwa.
Sei Tichifanira Kusarudza Matanda Edu eSilicon Carbide?
Kururama Kwakakwirira:Kugadzirisa kunowanikwa zvichienderana nehurefu, hupamhi, uye ukobvu zvichienderana nezvaunoda.
Hunhu Hwepamusoro Uye Kugadzikana:Kushandisa zvinhu zvepamusoro-soro uye kutonga kwakasimba kwemhando kuti uve nechokwadi chekuti mashandiro anoramba achienderera mberi.
Hupenyu Hurefu hweBasa:Iine magumo akapfava anodzivirira kunamira kwezvinhu uye inoita kuti igare kwenguva refu.
Rutsigiro Rwakakwana:Kupa rubatsiro rwakazara rwehunyanzvi uye sevhisi yekupedza kutengesa, kusanganisira mazano ekushandisa zvinhu zvakakodzera zvichienderana nemamiriro ekushanda echoto chako.
Zvimiro:
Reaction Bonded Silicon Carbide / RBSiC Beam:
(1) Maitiro Ekubatanidza Maitiro Epamusoro:Inoshandisa nzira yekubatanidza silicon carbide nesimbi silicon, zvichiita kuti chimiro chayo chive chakafanana uye chakakora.
(2) Simba Rakanyanya reMichina:Inozvirumbidza nesimba rayo guru uye inodzivirira zvikuru kuvhunduka kana kurovera.
(3) Kuramba Kupisa Kwakanaka:Iine mafambiro ekupisa akakwira uye ine chiyero chakaderera chekuwedzera kwekupisa, zvichiita kuti ive nechokwadi chekuti kupisa hakudhuri zvakanyanya.
(4) Mhinduro Inoshanda Nemutengo Wakaderera:Inopa mutengo unokwikwidzana usingakanganisi mhando, ichipa chiyero chakanaka chemutengo nekushanda zvakanaka.
(5) Kushandiswa Kunochinja-chinja:Yakanakira kushandiswa mumaovheni anoenderera mberi uye mamiriro ekushanda ane kushanduka kukuru kwekushisa.
Silicon Carbide / RSiC Beam Yakagadziriswazve:
(1) Maumbirwo eSiC Akachena:Yakagadzirwa kuburikidza nemaitiro ekudzokororazve kwecrystallization inodziya zvakanyanya, zvichikonzera chimiro chesilicon carbide chakachena che100% chisina chikamu chesilicon chesimbi.
(2) Kuramba Kupisa Kwakanyanya:Inodzivirira kupisa zvakanyanya, inokwanisa kutsungirira tembiricha dzekushanda kwenguva refu kubva pa1600°C kusvika 1800°C.
(3) Kuramba Kupisa & Kuomesa Kwepamusoro:Inodzivirira zvakanyanya kuoxidation uye ngura yemakemikari, zvichiita kuti ive yakakodzera munzvimbo dzinopisa zvakanyanya.
(4) Kuramba Kupisa Kwepamusoro:Iine chiyero chakaderera kwazvo chekuwedzera kwekupisa, ichipa kugadzikana kwakanyanya kwekupisa kunyangwe kana kupisa/kutonhora kuchikurumidza.
(5) Hupenyu Hwebasa Rakawedzerwa:Yakagadzirirwa kugara kwenguva refu, yakakodzera zvakakwana maovheni makuru, anodziya zvakanyanya, uye anorema emaindasitiri.
| Beam reRBSiC | ||
| Chinhu | Chikamu | Data |
| Kupisa Kwakanyanya Kwekushandisa | ℃ | ≤1380 |
| Kuwanda kwevanhu | g/cm3 | ＞3.02 |
| Vhura Porosity | % | ≤0.1 |
| Simba Rekukombama | Mpa | 250(20℃); 280(1200℃) |
| Modulus yeElasticity | Gpa | 330(20℃); 300(1200℃) |
| Kufambisa kwekupisa | W/mk | 45 (1200℃) |
| Kuwedzerwa kweThermal Coefficient | K-1*10-6 | 4.5 |
| Kuoma kwaMoh | | 9.15 |
| Inodzivirira Alkaline neAcid | | Zvakanakisa |
| Kugona kweRBSiC(SiSiC) Beams | ||||||
| Kukura kweChikamu (mm) | Rusvingo Ukobvu (mm) | Kuisa zvinhu zvakanyanya (kg.m/L) | Kutakura Kunogoverwa Zvakafanana (kg.m/L) | |||
| Rutivi rweB | H Rutivi | Rutivi rweW | H Rutivi | Rutivi rweW | H Rutivi | |
| 30 | 30 | 5 | 74 | 74 | 147 | 147 |
| 30 | 40 | 5 | 117 | 95 | 235 | 190 |
| 40 | 40 | 6 | 149 | 149 | 298 | 298 |
| 50 | 50 | 6 | 283 | 283 | 567 | 567 |
| 50 | 60 | 6 | 374 | 331 | 748 | 662 |
| 50 | 70 | 6 | 473 | 379 | 946 | 757 |
| 60 | 60 | 7 | 481 | 481 | 962 | 962 |
| 80 | 80 | 7 | 935 | 935 | 1869 | 1869 |
| 100 | 100 | 8 | 1708 | 1708 | 3416 | 3416 |
| 110 | 110 | 10 | 2498 | 2498 | 4997 | 4997 |
Beam reRBSiC/SiSiC:
Zvitofu zvesimbi zveceramic; Zvitofu zvesimbi zve ceramic zvemagetsi; Zvitofu zve magnetic material; Midziyo yekudzima moto inonyungudutsa.
Mashizha eRSiC:
Maovheni emuchina wekuchenesa; Maovheni epurasitiki anotenderera; Maovheni egirazi; Maovheni anodziya zvakanyanya emidziyo yepurasitiki yakakosha; Midziyo yesimbi inodziya zvakanyanya.
Mibvunzo Inowanzo bvunzwa
Unoda rubatsiro here? Iva nechokwadi chekushanyira maforamu edu ekutsigira kuti uwane mhinduro dzemibvunzo yako!
Isu tiri vagadziri chaivo, fekitari yedu yagara iine hunyanzvi mukugadzira zvinhu zvinoramba kugadzika kweanopfuura makore makumi matatu. Tinovimbisa kupa mutengo wakanakisa, sevhisi yakanakisisa isati yatengeswa uye mushure mekutengesa.
Pakugadzira kwega kwega, RBT ine QC system yakakwana yemakemikari uye hunhu hwemuviri. Uye tichaedza zvinhu, uye chitupa chemhando yepamusoro chichatumirwa nezvinhu. Kana muine zvinodiwa zvakakosha, tichaedza nepese patinogona kuti zvienderane nazvo.
Zvichienderana nehuwandu, nguva yedu yekutumira yakasiyana. Asi tinovimbisa kutumira nekukurumidza sezvinobvira nerubatsiro rwemhando.
Ehe, tinopa mienzaniso yemahara.
Ehe, zvechokwadi, munogamuchirwa kushanyira kambani yeRBT nezvigadzirwa zvedu.
Hapana muganho, tinogona kukupa mazano akanakisa uye mhinduro zvichienderana nemamiriro ako ezvinhu.
Tave tichigadzira zvinhu zvinoramba kushanda kwemvura kwemakore anopfuura makumi matatu, tine rutsigiro rwakasimba rwehunyanzvi uye ruzivo rwakakura, tinogona kubatsira vatengi kugadzira makinu akasiyana uye kupa sevhisi imwe chete.
